1999. 8. 7
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SEMICONDUCTOR
TECHNICAL DATA
KTB598
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
Low Saturation Voltage
: V
CE(sat)
=-0.3V(Max.) at I
C
=-0.5A.
Complementary to KTD545.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-50mA
70
-
400
h
FE
(2)
V
CE
=-2V, I
C
=-1A(Pulse)
30
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.15
-0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-0.85
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
-
180
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
25
-
pF
Note : h
FE
Classification O:70 140, Y:120 240, GR:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1999. 8. 7
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KTB598
Revision No : 1
-0.01
COLLECTOR-EMITTER SATURATION
CE
-300
-100
-30
-10
COLLECTOR CURRENT I (mA)
C
V - I
h - I
C
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-1
-2
-3
-4
-5
-6
-7
-200
-400
-600
-800
CE(sat)
C
-1K
-3K
-10K
-0.03
0.05
-0.1
-0.3
-0.5
-1.0
I /I =10
C
FE
C
-8
I =0mA
B
B
I =-1mA
B
I =-2mA
B
I =-4mA
B
I =-6mA
B
I =-10mA
I =-8mA
B
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
0
-200
-400
-0.2
-600
-800
C
-0.8
-0.4
-0.6
-1.0
CE
I - V
C
CE
-1000
B
I =-1mA
I =-3mA
B
I =-5mA
B
I =-10mA
B
I
=-
20mA
B
I =-30mA
B
I
=-
50m
A
B
I =-10
0mA
B
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (A)
0
0
-0.2
-0.4
-0.2
-0.4
-0.6
-0.8
C
-1.4
-0.6
-0.8
-1.0 -1.2
-1.6
BE
I - V
C
BE
-1.0
-1.2
-1.4
V =-2V
CE
-2.0
VOLTAGE V (V)
B
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
-300
-10
30
10
-1
-3
-30
C
-100
-1K
V =-10V
CE
500
50
100
300
T
1K
2K
f - I
T
C
-1
-3
-10
-30
-1
FE
DC CURRENT GAIN h
-100 -300 -1K
-3K -10K
-3
-5
-10
-30
-50
-100
-300
-500
V =-2V
CE
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